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Proceedings Paper

Copper cluster formation and evolution in amorphous materials grown by co-sputtering of copper with SiO2
Author(s): Dmitri V. Kulikov; Yuri V. Trushin; Serguei A. Gurevich; Vasily A. Zabelin
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Paper Abstract

The process of copper nanoclusters evolution in amorphous films, formed by co-sputtering of Cu and SiO2, has been investigated theoretically. Bulk copper diffusion during sample annealing after fabrication have been described by kinetic equation set and cluster size distribution function have been obtained. The reasonable agreement of theoretical and experimental results has been achieved. The values of bulk copper activation migration energy have been estimated. For investigating clusters formation with different copper content method of molecular dynamics have been developed. Both methods have reasonable agreement for low time diffusion.

Paper Details

Date Published: 25 January 2000
PDF: 7 pages
Proc. SPIE 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (25 January 2000); doi: 10.1117/12.375443
Show Author Affiliations
Dmitri V. Kulikov, A.F. Ioffe Physical-Technical Institute (Russia)
Yuri V. Trushin, A.F. Ioffe Physical-Technical Institute (Russia)
Serguei A. Gurevich, A.F. Ioffe Physical-Technical Institute (Russia)
Vasily A. Zabelin, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 4064:
Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering

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