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Proceedings Paper

Photothermal measurements of Al+- and Al+/N+- implanted 6H-SiC
Author(s): Joerg Pezoldt; Gerd Teichert; Dieter Panknin; Matthias Voelskow
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Paper Abstract

Thermal wave measurements on 6H-SiC with a particular emphasis on Al+ and Al+/N+ implanted 6H-SiC was carried out. The 6H-SiC wafers were implanted at different substrate temperatures. The photothermal measurements of the conversion coefficient K and the reflectivity R show a strong dependence on the implantation temperature. This result is discussed in relation to Rutherford backscattering spectrometry/ion channeling measurements. The behavior of the reflectivity in dependence on the implantation conditions could be modelized by using a simple two layer optical model. The carried out investigations of the implanted SiC demonstrate, that photothermal methods are suitable for both research and on- line production use.

Paper Details

Date Published: 25 January 2000
PDF: 5 pages
Proc. SPIE 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (25 January 2000); doi: 10.1117/12.375440
Show Author Affiliations
Joerg Pezoldt, Technische Univ. Ilmenau (Germany)
Gerd Teichert, Materialforschungs-und-pruefanstalt Weimar (Germany)
Dieter Panknin, Forschungszentrum Rossendorf e.V. (Germany)
Matthias Voelskow, Forschungszentrum Rossendorf e.V. (Germany)


Published in SPIE Proceedings Vol. 4064:
Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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