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Proceedings Paper

Single-electron transport through the Anderson center on Si(100) surface
Author(s): Nikolai T. Bagraev; Alexei D. Bouravleuv; Leonid E. Klyachkin; Anna M. Malyarenko; Valery M. Mikoushkin; Serguei Yu. Nikonov; Serguei A. Rykov
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Paper Abstract

We present the findings of single-electron transport through the Ag-related center as a quantum dot weakly coupled by tunneling junctions with the silicon quantum wire which is formed at the Si (100) surface by the crystallographically- oriented chain of the adsorbed silver atoms. The quantum dot of this art is shown to be variable thereby demonstrating the quantum staircase in forward bias and to change a position as a function of charge states revealed by the Coulomb single-electron charging in reverse bias. The effects observed seem to be due to a field-dependent asymmetry of the barriers isolating the Ar-related center from the silicon quantum wire.

Paper Details

Date Published: 25 January 2000
PDF: 5 pages
Proc. SPIE 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (25 January 2000); doi: 10.1117/12.375416
Show Author Affiliations
Nikolai T. Bagraev, A.F. Ioffe Physical-Technical Institute (Russia)
Alexei D. Bouravleuv, A.F. Ioffe Physical-Technical Institute (Russia)
Leonid E. Klyachkin, A.F. Ioffe Physical-Technical Institute (Russia)
Anna M. Malyarenko, A.F. Ioffe Physical-Technical Institute (Russia)
Valery M. Mikoushkin, A.F. Ioffe Physical-Technical Institute (Russia)
Serguei Yu. Nikonov, A.F. Ioffe Physical-Technical Institute (Russia)
Serguei A. Rykov, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 4064:
Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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