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Proceedings Paper

Dielectric dilatometry on thin Teflon-PTFE films prepared by pulsed-laser deposition
Author(s): Reinhard Schwoediauer; Simona Bauer-Gogonea; Stefan Bauer; J. Heitz; Enno Arenholz; Dieter Baeuerle
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Paper Abstract

Polytetrafluoroethylene (Teflon PTFE) films were grown by pulsed-laser deposition (PLD). Films prepared by ablation from press-sintered targets are found to be highly crystalline, with spherulite sizes adjustable over more than one order in magnitude by suitable thermal annealing. As revealed by dielectric dilatometry, PLD-PTFE films show characteristics remarkably similar to those of conventional PTFE, i.e. the same structural first-order phase transitions. Dielectric losses are low and indicate no tendency to film oxidation. PLD-PTFE films additionally show an excellent charge-stability, comparable and even superior to commercially available Teflon-PTFE foils. PLD-PTFE enlarges the family of Teflon materials and may thus become interesting for potential miniaturized electret devices. Furthermore, dielectric dilatometry provides an elegant means for the determination of the coefficient of thermal expansion in thin nonpolar films.

Paper Details

Date Published: 14 December 1999
PDF: 7 pages
Proc. SPIE 4017, Polymers and Liquid Crystals, (14 December 1999); doi: 10.1117/12.373688
Show Author Affiliations
Reinhard Schwoediauer, Johannes-Kepler-Univ. Linz (Austria)
Simona Bauer-Gogonea, Johannes-Kepler-Univ. Linz (Austria)
Stefan Bauer, Johannes-Kepler-Univ. Linz (Germany)
J. Heitz, Johannes-Kepler-Univ. Linz (Austria)
Enno Arenholz, Johannes-Kepler-Univ. Linz (Austria)
Dieter Baeuerle, Johannes-Kepler-Univ. Linz (Austria)


Published in SPIE Proceedings Vol. 4017:
Polymers and Liquid Crystals
Andrzej Wlochowicz, Editor(s)

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