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Proceedings Paper

Optical characterization of glass materials doped with rare-earth elements
Author(s): Jiri Zavadil; Dimitrij Lezal; Olga Prochazkova
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Paper Abstract

Sulphide glasses of GeGaS and GeGaAsS systems doped with rare earth ions are promising materials for various photonic applications. Because the solubility of rare earth elements ins influenced by the purity of host glass, namely by OH group concentration, the attention has been paid to the preparation of highly pure and homogeneous undoped and rare earth doped glasses. Particularly the systems Ge0.25Ga0.1-xS0.65Prx and Ge0.25Ga0.05- xAs0.05S0.65Prx with x equals 500, 1000, 3000, 6000 wt. ppm have been prepared. Synthesized materials system have been characterized by Raman and low-temperature photoluminescence spectroscopies. The optical Pr concentration has been found to be around 1000 wt.ppm. The appearance of temperature induced radiative transitions have been observed on GeGaS:Er samples.

Paper Details

Date Published: 29 December 1999
PDF: 6 pages
Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); doi: 10.1117/12.373676
Show Author Affiliations
Jiri Zavadil, Institute of Radio Engineering and Electronics (Czech Republic)
Dimitrij Lezal, Lab. of Inorganic Materials (Czech Republic)
Olga Prochazkova, Institute of Radio Engineering and Electronics (Czech Republic)


Published in SPIE Proceedings Vol. 4016:
Photonics, Devices, and Systems
Miroslav Hrabovsky; Pavel Tomanek; Miroslav Miler, Editor(s)

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