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Proceedings Paper

Laser technology in the preparation of Pt/doping element/Pd/n+-GaAs contacts
Author(s): Petr Machac; Vladimir Myslik; Jan Zlamal
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Paper Abstract

The performance of W/Pt/doping element/Pd and Pt/doping element/Pd ohmic contacts has been investigated, where Ge, Si, and Sn were employed as doping elements. The contacts were deposited by vacuum sputtering on n+-GaAs substrate plates and GaAs or AlGaAs epitaxial layers, then annealed by a power YAG:Nd laser. The influence of the doping elements on the parameters for ohmic contacts was not significant, with germanium being the best, we obtained a minimum value of rc equals 5 X 10-6 (Omega) cm2. The layers of GaAs and AlGaAs were prepared with (delta) -doping by MOVPE epitaxial growth method. The minimal values of contact resistivities of 1.1 X 10-4 (Omega) cm2 and 7.35 X (Omega) cm2 were achieved.

Paper Details

Date Published: 29 December 1999
PDF: 4 pages
Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); doi: 10.1117/12.373635
Show Author Affiliations
Petr Machac, Institute of Chemical Technology (Czech Republic)
Vladimir Myslik, Institute of Chemical Technology (Czech Republic)
Jan Zlamal, Institute of Chemical Technology (Czech Republic)


Published in SPIE Proceedings Vol. 4016:
Photonics, Devices, and Systems

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