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Proceedings Paper

Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography
Author(s): Janis Teteris; Timo Jaeaeskelaeinen; Jari Pekka Turunen; K. Jefimov
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Paper Abstract

New results on the studied of photo- and electron beam induced changes in solubility of amorphous As-S-Se and As2S3 thin films are reviewed. It is shown that amorphous chalcogenide semiconductor resist can be applied in holography and the fabrication of diffractive optical elements by electron beam lithography is possible.

Paper Details

Date Published: 29 December 1999
PDF: 5 pages
Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); doi: 10.1117/12.373626
Show Author Affiliations
Janis Teteris, Univ. of Latvia (Latvia)
Timo Jaeaeskelaeinen, Univ. of Joensuu (Finland)
Jari Pekka Turunen, Univ. of Joensuu (Finland)
K. Jefimov, Univ. of Joensuu (Finland)

Published in SPIE Proceedings Vol. 4016:
Photonics, Devices, and Systems
Miroslav Hrabovsky; Pavel Tomanek; Miroslav Miler, Editor(s)

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