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Proceedings Paper

Reduction of absorption loss in silica-on-silicon channel waveguides fabricated by low-temperature PECVD process
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Paper Abstract

This study is focused on the low temperature plasma enhanced chemical vapor deposition technique used for fabrication of silica based optical waveguides on silicon, utilizing nitrous oxide as an oxidant for both silane and dopant. Fabricated channel waveguide shows total insertion loss of 1.2 dB at 1.55 micrometers , and no absorption peaks associated with N-H and Si-H bonds around 1.5 micrometers have been observed in the as deposited material. This fabrication technology adds flexibility to the monolithic integration of electronic and optical components. Using this technology, a n umber of different couplers based on multimode interference technique have been investigated.

Paper Details

Date Published: 29 December 1999
PDF: 5 pages
Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); doi: 10.1117/12.373601
Show Author Affiliations
Jayanta K. Sahu, Royal Institute of Technology (United Kingdom)
Lech Wosinski, Royal Institute of Technology (Sweden)
Harendra Fernando, Royal Institute of Technology (Sweden)

Published in SPIE Proceedings Vol. 4016:
Photonics, Devices, and Systems
Miroslav Hrabovsky; Pavel Tomanek; Miroslav Miler, Editor(s)

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