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Proceedings Paper

Fabrication process of Cr-based attenuated phase-shift masks for KrF excimer laser lithography
Author(s): Ichiro Kagami; Kiichi Ishikawa; Daichi Kakuta; Hiroichi Kawahira
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Paper Abstract

We have developed a Cr-based attenuated phase shift mask process for 0.18 micrometer device generation. The fabrication process including formation of opaque patterns with an electric conductive material is introduced. With a Cr-based attenuated phase shifter material, it is possible to adjust phase angle using a post process of quartz etching after mask defect inspection. Phase and transmittance control satisfied requirements for attenuated phase shift masks (att-PSMs) of 0.18 micrometer generation. Preliminary investigation of printability for after repair of a small clear defect with a conventional focus ion beam (FIB) carbon deposition film is reported. A positive carbon deposition bias is effective to obtain a larger common ED-window, and a more feasible ED- window can be obtained with a thinner carbon deposition film. Such a clear defect repair technique is indispensable in att- PSM fabrication.

Paper Details

Date Published: 30 December 1999
PDF: 11 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373387
Show Author Affiliations
Ichiro Kagami, Sony Corp. (Japan)
Kiichi Ishikawa, Sony Corp. (Japan)
Daichi Kakuta, Sony Corp. (Japan)
Hiroichi Kawahira, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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