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Proceedings Paper

CD error sensitivity to "sub-killer" defects at k1 near 0.4: II
Author(s): Kent H. Nakagawa; J. Fung Chen; Robert John Socha; Mircea V. Dusa; Thomas L. Laidig; Kurt E. Wampler; Roger F. Caldwell; Douglas J. Van Den Broeke
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Paper Abstract

Recent observations indicate that CD control for the 0.18 micrometer process generation using KrF exposure (k1 equals 0.41) could be sensitive to borderline detectable defect sizes (200 to 300 nm) on a 4X reticle. It is of interest to determine if these 'sub-killer' defect sizes can become process window limiting. It is also important to determine if CD error is sensitive to the interaction between defects and scattering bar (SB) OPC features. The experiment was based on a typical 0.18 micrometer process using the Defect Sensitivity Monitor (DSM) Reticle -- designed by MaskTools and manufactured by Photronics. Printed wafer data was presented previously on isolated feature cases. Here, data is presented on dense feature cases. In agreement with earlier isolated data, greater than 10% printed CD error was found for defects occurring on the main feature such as a 200 nm bump or a 250 nm divot on a 4X reticle. Greater than 6% of the exposure latitude can be lost due to plus or minus 50 nm (4X) mask feature width deviations.

Paper Details

Date Published: 30 December 1999
PDF: 12 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373382
Show Author Affiliations
Kent H. Nakagawa, ASML MaskTools (United States)
J. Fung Chen, ASML MaskTools (United States)
Robert John Socha, ASML MaskTools (United States)
Mircea V. Dusa, ASM Lithography (United States)
Thomas L. Laidig, ASML MaskTools (United States)
Kurt E. Wampler, ASML MaskTools (United States)
Roger F. Caldwell, ASML MaskTools (United States)
Douglas J. Van Den Broeke, Align-Rite Corp. (United States)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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