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Proceedings Paper

Modeling of optical constants of materials comprising photolithographic masks in the VUV
Author(s): Dale A. Harrison; John C. Lam; George G. Li; A. Rahim Forouhi; Giang T. Dao
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Paper Abstract

The optical properties of materials comprising photolithographic masks are investigated at wavelengths covering the vacuum-ultra-violet (VUV) to the near-infra-red (NIR). Broadband reflectance (R) and transmittance (T) spectra from 130 to 1000-nm are obtained from a variety of single layer absorber and bi-layer absorber/anti-reflection coating (ARC) samples deposited on MgF2 and CaF2 substrates. These experimental data are analyzed using the Forouhi-Bloomer (F-B) dispersion equations, in conjunction with a least squares fitting algorithm, to infer the thickness and n and k spectra of the materials under investigation. Once determined, the optical properties of the component materials are used to calculate the optical density of the single layer absorbers at 157-nm. These preliminary calculations are performed to investigate the feasibility of extending the use of traditional mask materials to wavelengths below 193-nm. In addition, theoretical swing-curve and standing wave functions are predicted for a mask structure based on the CrOxNy/Cr material system.

Paper Details

Date Published: 30 December 1999
PDF: 9 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373379
Show Author Affiliations
Dale A. Harrison, n&k Technology, Inc. (United States)
John C. Lam, n&k Technology, Inc. (United States)
George G. Li, n&k Technology, Inc. (United States)
A. Rahim Forouhi, n&k Technology, Inc. (United States)
Giang T. Dao, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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