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Proceedings Paper

Use of programmed multilayer defects in validating a defect compensation strategy for EUV lithography
Author(s): Avijit K. Ray-Chaudhuri; Gregory Frank Cardinale; Aaron Fisher; Pawitter J. S. Mangat; Ted Liang; Donald W. Sweeney
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Paper Abstract

We propose the use of optical proximity correction on absorber features to compensate for the effect of sub-resolution multilayer defects that would otherwise induce a critical error in linewidth. A series of defect printability and compensation experiments utilizing programmed multilayer defects are presented which demonstrate this approach. The amount of absorber removal for defect compensation depends on system imaging performance and the quality of the absorber removal process. A process flow for the mask fabrication, defect characterization and compensation is presented.

Paper Details

Date Published: 30 December 1999
PDF: 6 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373378
Show Author Affiliations
Avijit K. Ray-Chaudhuri, Sandia National Labs. (United States)
Gregory Frank Cardinale, Sandia National Labs. (United States)
Aaron Fisher, Sandia National Labs. (United States)
Pawitter J. S. Mangat, Motorola (United States)
Ted Liang, Intel Corp. (United States)
Donald W. Sweeney, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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