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Proceedings Paper

Next-generation lithography mask development at the NGL Mask Center of Competency
Author(s): Michael J. Lercel; Cameron J. Brooks; Kenneth C. Racette; Christopher Magg; Mark Lawliss; Neal Caldwell; Raymond Jeffer; Kevin W. Collins; Monica Barrett; Steven C. Nash; Michael J. Trybendis; Lucien Bouchard
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Paper Abstract

Mask fabrication is one of the difficult challenges with all Next Generation Lithography (NGL) technologies. X-ray, e-beam projection, and ion-beam projection lithography all use some form of membrane mask, and extreme ultraviolet (EUV) lithography uses a reflective mask. Despite some differences, the various mask technologies share some common features and present similar fabrication difficulties. Over the past several years, the IBM Advanced Mask Facility (AMF) has focused on the fabrication of x-ray masks. Several key accomplishments have been demonstrated including fabricating masks with critical dimensions (CD) as small as 75 nm, producing line monitor masks in a pilot line mode to evaluate mask yields, and fabricating masks to make working microprocessors with the gate level defined by x-ray lithography. The experience on fabricating 1X x-ray masks is now being applied to the other NGL mask technologies. Progress on membrane and absorber materials can be applied to all the technologies, and patterning with advanced e-beam writing with chemically amplified resists utilizes learning from writing and baking on x-ray membrane masks.

Paper Details

Date Published: 30 December 1999
PDF: 10 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373374
Show Author Affiliations
Michael J. Lercel, IBM Microelectronics Div. (United States)
Cameron J. Brooks, IBM Microelectronics Div. (United States)
Kenneth C. Racette, IBM Microelectronics Div. (United States)
Christopher Magg, IBM Microelectronics Div. (United States)
Mark Lawliss, IBM Microelectronics Div. (United States)
Neal Caldwell, IBM Microelectronics Div. (United States)
Raymond Jeffer, IBM Microelectronics Div. (United States)
Kevin W. Collins, IBM Microelectronics Div. (United States)
Monica Barrett, IBM Microelectronics Div. (United States)
Steven C. Nash, IBM Microelectronics Div. (United States)
Michael J. Trybendis, IBM Microelectronics Div. (United States)
Lucien Bouchard, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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