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Proceedings Paper

Comparison study of mask error effects for various mask-making processes
Author(s): Tae-Seung Eom; Ikboum Hur; Youngmo Koo; Ki-Ho Baik; Il-Hyun Choi; Do Yun Kim; Chul Shin
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Paper Abstract

Photomask is one of the most critical technologies for lithography. Optical lithography at resolution limit is a non- linear pattern transfer process. OPC (Optical Proximity Correction) technology has been used in the semiconductor industry for controlling the shape of pattern, and eliminating the line shortening and corner rounding effects for submicron feature. Therefore, OPC technology is an approach for improving lithography performance that has been received much attention recently. We investigated the lithographic performance in terms of EL (Exposure Latitude), DOF (Depth of Focus), and mask error effects for various mask fabrication. It was observed that mask error gave severe influence on the lithographic performance and the OPC simulation error also strongly depended upon the mask quality.

Paper Details

Date Published: 30 December 1999
PDF: 12 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373369
Show Author Affiliations
Tae-Seung Eom, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ikboum Hur, Hyundai Electronics Industries Co., Ltd. (South Korea)
Youngmo Koo, Hyundai Electronics Industries Co., Ltd. (United States)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (United States)
Il-Hyun Choi, Hyundai Electronics Industries Co., Ltd. (South Korea)
Do Yun Kim, DuPont Photomasks Korea Ltd. (South Korea)
Chul Shin, DuPont Photomasks Korea Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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