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Proceedings Paper

Carbon stain effects from SEM exposure
Author(s): John Grantz; Robert K. Henderson; James L. Wood
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Paper Abstract

Due to resolution limitations in optical measurement technology, electron microscopy is becoming the preferred method of metrology for reticles. In addition, electron microscopy provides an excellent means for imaging and defect analysis. Therefore, the use of Scanning Electron Microscopes (SEM) on photomasks is increasing, and will continue to do so as feature sizes reduce. One disadvantage to this technology is the deposition of carbon in the exposure area. Experiments were conducted to quantify transmission loss, feature size variation, and stain thickness as a result of this deposition. Results suggest that minimal SEM exposure, including single measurements and imaging, has a negligible effect on the properties tested. Significant changes in transmission and feature size were noticed after multiple exposures. Experiments were conducted to remove the carbon stain, in an attempt to return the masks to the pre-exposure conditions.

Paper Details

Date Published: 30 December 1999
PDF: 9 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373364
Show Author Affiliations
John Grantz, DuPont Photomasks, Inc. (United States)
Robert K. Henderson, DuPont Photomasks, Inc. (United States)
James L. Wood, DuPont Photomasks, Inc. (United States)

Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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