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Proceedings Paper

Reticle defect size calibration using low-voltage SEM and pattern recognition techniques for sub-200-nm defects
Author(s): Larry S. Zurbrick; Steve Khanna; Jay Lee; James J. Greed; Ellen R. Laird; Rene M. Blanquies
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Paper Abstract

Programmed defect test reticles are required to characterize automatic defect inspection equipment. In order to perform meaningful, quantitative comparisons between inspection systems, a precise and accurate defect sizing methodology is required. Historically, commercially available programmed defect test reticles have not had traceable or well-documented defect sizing methods nor was information regarding the precision of these measurements provided. This paper describes the methods used and results obtained from the work performed to address these issues. Using a low voltage scanning electron microscope as an image acquisition system, defect sizing is accomplished using automated pattern recognition software. The software reports defect size metrics such as maximum inscribed circle diameter and area. Measurement precision better than 30 nm has been demonstrated for the maximum inscribed circle method. The correlation of SEM based measurements to historical optical metrology measurements is also discussed.

Paper Details

Date Published: 30 December 1999
PDF: 8 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373361
Show Author Affiliations
Larry S. Zurbrick, KLA-Tencor Corp. (United States)
Steve Khanna, KLA-Tencor Corp. (United States)
Jay Lee, KLA-Tencor Corp. (South Korea)
James J. Greed, VLSI Standards, Inc. (United States)
Ellen R. Laird, VLSI Standards, Inc. (United States)
Rene M. Blanquies, VLSI Standards, Inc. (United States)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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