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Proceedings Paper

Masking materials for 157-nm lithography
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Paper Abstract

Constraints of the photomask are beginning to play dominate roles in the advancement of new microlithographic technology. Mask substrate materials are being explored by several groups. In this work, we explore the thin film masking layers themselves and identify potential solutions for binary and phase-shift masking films for use at 157 nm. The chromium based absorbing films used for binary masking are likely to meet the required needs. Modification of the composition will be required. Attenuated phase shift masking films become challenging as few transparent host thin film materials exist at the 157 nm wavelength.

Paper Details

Date Published: 30 December 1999
PDF: 9 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373337
Show Author Affiliations
Bruce W. Smith, Rochester Institute of Technology (United States)
Anatoly Bourov, Rochester Institute of Technology (United States)
Matthew Lassiter, Rochester Institute of Technology (United States)
Michael J. Cangemi, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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