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Proceedings Paper

Sub-0.18-um line/space lithography using 248-nm scanners and assisting feature OPC masks
Author(s): Huitzu Lin; John C.H. Lin; Ching Siun Chiu; Ying-Ying Wang; Anthony Yen
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Paper Abstract

The downscaling of critical dimensions (CD) in semiconductor circuits has been pushing photolithography to print features below the wavelength of the light source. However, severe proximity effect and small DOF for isolated lines have brought challenges to sub-0.18 micrometer lithography in manufacturing using 248 nm scanners. To improve proximity effect and DOF for isolated lines, assisting features (AF) on masks are considered. However, the practical application of this technique has been limited because of difficulties in mask fabrication. In this paper, we discuss items that concern both photolithographers and mask-makers as AF is applied in manufacturing. These items include mask error factor (MEF), depth of focus (DOF) improvement, AF line width control, lithographic impact caused by the drift of the mean value of mask CD, defect printability in resist, and defect sensitivity during mask inspection.

Paper Details

Date Published: 30 December 1999
PDF: 9 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373326
Show Author Affiliations
Huitzu Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
John C.H. Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Ching Siun Chiu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Ying-Ying Wang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co., Ltd. (United States)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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