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Proceedings Paper

Advanced e-beam lithography system JBX-9000MV for 180-nm masks
Author(s): Hitoshi Takemura; Tadashi Komagata; Yasutoshi Nakagawa; Kazumitsu Tanaka
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Paper Abstract

JEOL has developed an E-Beam lithography system JBX-9000MV with a vector scan and variable shaped beam (VSB) electron optics for the manufacture of 180nm - 150nm devices masks. This system employs 50kV accelerating voltage, low space charge effect column and in-lens deflector system. Beam current density is 10A/cm2, maximum mask size is 230 mm (9'), beam address size is 2 nm. Extended evaluation of the system shows pattern placement accuracy of 30 nm or better, field stitching accuracy of 20 nm or better, critical dimension (CD) accuracy of 20 nm or better.

Paper Details

Date Published: 30 December 1999
PDF: 7 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373325
Show Author Affiliations
Hitoshi Takemura, JEOL Ltd. (Japan)
Tadashi Komagata, JEOL Ltd. (Japan)
Yasutoshi Nakagawa, JEOL Ltd. (Japan)
Kazumitsu Tanaka, JEOL Ltd. (Japan)

Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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