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Proceedings Paper

Development of simplified process for KrF excimer halftone mask with chrome-shielding method
Author(s): Shinji Kobayashi; N. Oka; Kunio Watanabe; Kiyochige Ohmori; M. Inoue; K. Iguchi
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Paper Abstract

New simplified process is developed successfully for KrF excimer half-tone mask with chrome shielding method. Process times are reduced to half compared with conventional process in which resist coating and exposure is performed twice. New simplified process is characterized by adopting half-exposure of electron beam, thin chrome film on a half-tone film, and endpoint detection in dry etching process. It is confirmed in this paper that half-tone masks fabricated by simplified process have mask quality and optical capability, which are required in 0.18 micrometer generation devices.

Paper Details

Date Published: 30 December 1999
PDF: 9 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373323
Show Author Affiliations
Shinji Kobayashi, Sharp Corp. (Japan)
N. Oka, Sharp Corp. (Japan)
Kunio Watanabe, Sharp Corp. (Japan)
Kiyochige Ohmori, Sharp Corp. (Japan)
M. Inoue, Sharp Corp. (Japan)
K. Iguchi, Sharp Corp. (Japan)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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