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Proceedings Paper

Fabrication of membrane mask for next-generation lithography
Author(s): Dong-Wan Kim; Jared D. Lera; Hanku Cho; Joo-Tae Moon
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Paper Abstract

Membrane masks are commonly adopted for the next generation lithography (NGL) such as proximity X-ray lithography (XRL), ion beam projection lithography (IPL), and SCALPEL. Since the NGL membrane masks have lower mechanical stability than the conventional optical mask, it is necessary to study the distortions of membrane masks during mask fabrication and application. Using various kinds of test patterns such as line and space patterns, contact hole arrays, rectangular island arrays, and square island arrays, the mechanical stiffness changes due to pattern transfer were investigated. The in- plane distortions of the membrane mask due to pattern transfer during mask fabrication are dependent on not only void fraction but also pattern shapes. The membrane masks with various kinds of patterns were fabricated and the in-plane distortions were measured.

Paper Details

Date Published: 30 December 1999
PDF: 6 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373320
Show Author Affiliations
Dong-Wan Kim, Samsung Electronics Co., Ltd. (South Korea)
Jared D. Lera, Samsung Electronics Co., Ltd. (United States)
Hanku Cho, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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