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Proceedings Paper

Techniques to inspect SCALPEL masks
Author(s): Darren Taylor; William B. Howard; Richard J. Kasica; Reginald C. Farrow; Anthony E. Novembre; Carlos Caminos; Chester S. Knurek
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Paper Abstract

As semiconductor lithography nodes become increasingly difficult to achieve with traditional optical lithography, several new technologies have emerged. SCALPEL (SCattering with Angular Limitation Electron beam Lithography) is at the forefront of the NGL technologies. SCALPEL technology uses an electron beam rather than laser light to produce images on the wafer. The SCALPEL mask is non-traditional in the sense that it is silicon-based instead of glass-based and the patterns are written on a membrane. SCALPEL provides unique challenges for the mask maker as well as the semiconductor manufacturer. In this study, we have demonstrated that the KLA-Tencor 3XX platform is capable of inspecting prototype SCALPEL reticles for pattern defects. The inspections were performed with two light wavelengths: 488 nm and 365 nm. Included are the difficulties faced and a projected roadmap for the inspection tool when SCALPEL enters at the 100 nm technology node.

Paper Details

Date Published: 30 December 1999
PDF: 7 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373300
Show Author Affiliations
Darren Taylor, Photronics, Inc. (United States)
William B. Howard, KLA-Tencor Corp. (United States)
Richard J. Kasica, Lucent Technologies/Bell Labs. (United States)
Reginald C. Farrow, Lucent Technologies/Bell Labs. (United States)
Anthony E. Novembre, Lucent Technologies/Bell Labs. (United States)
Carlos Caminos, Lucent Technologies/Bell Labs. (United States)
Chester S. Knurek, Lucent Technologies/Bell Labs. (United States)

Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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