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Proceedings Paper

Optimization of ZEP 7000 writing and development conditions
Author(s): Daniel Courboin; Philippe Gervot; Chantal Gayou; Patrick Montarou
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Paper Abstract

Advanced reticule specifications for 150 nm generation devices require large-scale improvements to resolution and critical dimension (CD) control. Resolution can be obtained by the adoption of electron-beam (e-beam) exposure and plasma etching with zero bias processes. However, CD control cannot be achieved without a writing and development strategy optimization. This paper describes the optimization of the key parameters (exposure and development) needed to reach CD uniformity below 20 nm necessary for 150 nm generation devices. The three factors (exposure dose, spot size and development time) were investigated by design of experiment (DOE). ZEP 7000 is an e-beam dry-etchable resist which requires higher dose than PBS and EBR-9 HS-31 usual e-beam resists. Therefore the exposure was made on a MEBES 4500 system combined with multipass gray (MPG) writing strategy. A puddle development was done on a STEAG ASE500 tool. CD measurements have been done after development on LEICA IPRO system using reflective light in order to eliminate the error induced by etching. The DOE results have been interpreted separately on the X and Y axis. The results of the DOE have been verified by measuring the edge resist slope with a scanning electron microscope (SEM) and by measuring chrome CD uniformity after dry etching and stripping.

Paper Details

Date Published: 30 December 1999
PDF: 10 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373293
Show Author Affiliations
Daniel Courboin, IBM Microelectronics Div. (France)
Philippe Gervot, IBM Microelectronics Div. (France)
Chantal Gayou, IBM Microelectronics Div. (France)
Patrick Montarou, IBM Microelectronics Div. (France)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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