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Proceedings Paper

TiSi-nitride-based attenuated phase-shift mask for ArF lithography
Author(s): Sang-Sool Koo; Ikboum Hur; Youngmo Koo; Ki-Ho Baik; Il-Hyun Choi; Lee-Ju Kim; Keuntaek Park; Chul Shin
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Paper Abstract

ArF DUV ((lambda) equals 193 nm) lithography is rapidly emerging after 248 nm lithography because of the demand for further resolution improvement and wider Depth Of Focus (DOF). However, the 193 nm lithography requires innovative development in various areas, such as laser sources, resist chemistry, new PSM shifter materials, and optics materials. In this study, we evaluated TiSi-nitride based new attenuated PSM in terms of mask making process and its lithographic performance for ArF lithography. We used two kinds of TiSi- nitride based attenuated PSM blanks having 6% and 9% transmittance, respectively. Chemical durability of TiN/SiN film was evaluated. We selected optimal dry etching condition for mask making with good mask profile (side wall angle greater than or equal to 85 degrees) and Quartz (Qz) substrate roughness. The DOF margin at 9%-PSM was larger than those of others (6%-PSM and BIM) and Exposure Latitude (EL) of PSM was larger than that of BIM. Therefore, we concluded that TiSiN- based attenuated PSM was effective for ArF lithography.

Paper Details

Date Published: 30 December 1999
PDF: 10 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373290
Show Author Affiliations
Sang-Sool Koo, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ikboum Hur, Hyundai Electronics Industries Co., Ltd. (South Korea)
Youngmo Koo, Hyundai Electronics Industries Co., Ltd. (United States)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (United States)
Il-Hyun Choi, Hyundai Electronics Industries Co., Ltd. (South Korea)
Lee-Ju Kim, DuPont Photomasks Korea Ltd. (South Korea)
Keuntaek Park, DuPont Photomasks Korea Ltd. (South Korea)
Chul Shin, DuPont Photomasks Korea Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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