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Proceedings Paper

Fast calculation of the temperature of HgCdTe irradiated with a pulsed laser
Author(s): Xiangyang Li; Jiaxiong Fang
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Paper Abstract

Computer simulation is often adapted to learn the temperature change behavior during the interaction between the pulsed laser and HgCdTe. Although the speed of the computer processor is faster and faster, a proper computation method remains critical for an effective simulation. A main hurdle in the conventional calculation is related to the number of layers, which must be estimated before calculation in this paper, a new method to calculation the temperature of HgCdTe irradiated pulsed laser was proposed. Namely, a few layers were considered firstly until the temperature profile fulfilled a certain condition, then some additional layers were considered. With some minor factors neglected, the calculation is faster than the conventional one. By comparing these two different kinds of calculation, it is suggested the new method can be used for fast simulation of the temperature behavior during the interaction between HgCdTe and pulsed laser.

Paper Details

Date Published: 28 December 1999
PDF: 4 pages
Proc. SPIE 3870, Sensors, Systems, and Next-Generation Satellites III, (28 December 1999); doi: 10.1117/12.373178
Show Author Affiliations
Xiangyang Li, Shanghai Institute of Technical Physics (China)
Jiaxiong Fang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 3870:
Sensors, Systems, and Next-Generation Satellites III
Hiroyuki Fujisada; Joan B. Lurie, Editor(s)

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