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Proceedings Paper

Ka-band monolithic GaAs PHEMT low-noise amplifiers for commercial wireless applications
Author(s): Huei Wang; Tzu-Hung Chen; D.C. Niu; Yi-Jen Chan; P.W. Kuo; H.S. Chou; K.L. Deng
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Paper Abstract

This paper presents the development of a one-stage and a two-stage Ka-band monolithic LNA for commercial wireless communication applications. The monolithic microwave/millimeter-wave integrated circuits (MMICs) are fabricated with a 0.2-micrometers pseudomorphic GaAs-based HEMT technology, carried out by commercially available foundry. The one-stage amplifier demonstrated a measured small signal gain of 9.5 dB with a noise figure (NF) of 2.7 dB at 28 GHz, while the two-stage amplifier has a measured gain of 17 dB with 3.3 dB NF at 28 GHz. Due to fabrication with the commercial foundry process, these MMICs have the potential for mass production.

Paper Details

Date Published: 13 December 1999
PDF: 6 pages
Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); doi: 10.1117/12.373020
Show Author Affiliations
Huei Wang, National Taiwan Univ. (Taiwan)
Tzu-Hung Chen, Airwave Technologies Inc. (Taiwan)
D.C. Niu, Chung-Shan Science and Technology Institute (Taiwan)
Yi-Jen Chan, National Central Univ. (Taiwan)
P.W. Kuo, National Taiwan Univ. (Taiwan)
H.S. Chou, National Taiwan Univ. (Taiwan)
K.L. Deng, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 3861:
Gigahertz Devices and Systems
Dwight C. Streit, Editor(s)

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