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Proceedings Paper

94-GHz MMIC CPW low-noise amplifier on InP
Author(s): Gilles Dambrine; Virginie Hoel; Samuel Boret; Bertrand Grimbert; Sylvain Bollaert; Xavier Wallart; Sylvie Lepilliet; Alain Cappy
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Paper Abstract

High performances have been achieved at W-band with a 2- stage, 0.1 micrometers gate-length InGaAs/InAlAs/InP LM-HEMT MMIC low noise amplifier in coplanar technology. To obtain the T- gate profile, we use silicon nitride SixNy technology, which leads to naturally passivated devices. For a drain-to-source current Ids equals 350 mA/mm the devices demonstrate a maximum intrinsic transconductance Gm of 1600 mS/mm and an intrinsic current gain cutoff frequency Fc equals 220 GHz. The extrinsic current gain cut-off frequency Ft is 175 GHz. The LNA shows a minimum noise figure of 3.3 dB with an associated gain of 11.5 dB at 94 GHz.

Paper Details

Date Published: 13 December 1999
PDF: 6 pages
Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); doi: 10.1117/12.373017
Show Author Affiliations
Gilles Dambrine, Univ. de Lille (France)
Virginie Hoel, Univ. de Lille (France)
Samuel Boret, Univ. de Lille (France)
Bertrand Grimbert, Univ. de Lille (France)
Sylvain Bollaert, Univ. de Lille (France)
Xavier Wallart, Univ. de Lille (France)
Sylvie Lepilliet, Univ. de Lille (France)
Alain Cappy, Univ. de Lille (France)


Published in SPIE Proceedings Vol. 3861:
Gigahertz Devices and Systems
Dwight C. Streit, Editor(s)

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