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Proceedings Paper

Effects of the relative positions between pn junction interface and SiGe-Si interface in SiGe/Si HBT
Author(s): Chen Xu; Guangdi Shen; Jianxing Chen; Deshu Zou; Huan Wei; Ji Luo; Jianjun Li; Jing Zhou; Xin Dong
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Paper Abstract

Abstract not available.

Paper Details

Date Published: 13 December 1999
PDF: 9 pages
Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); doi: 10.1117/12.373016
Show Author Affiliations
Chen Xu, Beijing Polytechnic Univ. (China)
Guangdi Shen, Beijing Polytechnic Univ. (China)
Jianxing Chen, Beijing Polytechnic Univ. (China)
Deshu Zou, Beijing Polytechnic Univ. (China)
Huan Wei, Beijing Polytechnic Univ. (China)
Ji Luo, Beijing Polytechnic Univ. (China)
Jianjun Li, Beijing Polytechnic Univ. (China)
Jing Zhou, Beijing Polytechnic Univ. (China)
Xin Dong, Beijing Polytechnic Univ. (China)


Published in SPIE Proceedings Vol. 3861:
Gigahertz Devices and Systems
Dwight C. Streit, Editor(s)

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