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Proceedings Paper

NPN-PNP InP HBT technology and applications to low-power wireless systems
Author(s): Dimitris Pavlidis; Donald Sawdai; Delong Cui
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Paper Abstract

The properties of NPN and PNP InP HBTs are reviewed and complementary HBT amplifiers built with this technology are explored. Complementary amplifiers such as those presented here manifest reduced harmonic distortion and could lead to improved wireless communication systems. The high efficiency push-pull amplifiers increase battery life, which is critical for hand-held systems. InP-based HBT technology offers distinct advantages over other semiconductor device and circuit approaches for wireless systems and the key merits of this technology are reported.

Paper Details

Date Published: 13 December 1999
PDF: 10 pages
Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); doi: 10.1117/12.373015
Show Author Affiliations
Dimitris Pavlidis, Univ. of Michigan (United States)
Donald Sawdai, Univ. of Michigan (United States)
Delong Cui, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 3861:
Gigahertz Devices and Systems
Dwight C. Streit, Editor(s)

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