Share Email Print

Proceedings Paper

DC and rf characteristics of submicron gate FETs formed by micromachined V-groove technology
Author(s): Nien Show Ho; Sheyshi Lu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The first In(formula available in paper). As micromachined V-groove gate doped-channel FET's (DCFET's) grown by GSMBE were proposed and fabricated successfully. The V-groove gate was formed by anisotropic wet etching of the undoped GaAs layer grown on top of device active layers, followed by standard metal evaporation and lift-off process. Owing to the outward slope of the sidewalls of micromachined V-groove, submicron effective gate length can be easily obtained by normal 1-micrometers UV optical contact lithography. In this way, we simultaneously achieved short gate length (for high speed) and small gate resistance (for low noise) via this `mushroom-like' V-groove gate, without resorting to the expensive and time-consuming e-beam lithography and the delicate multi-layer photoresist technique. Thanks to the inherent process simplicity, fabricated V-groove gates showed great uniformity and yield in a cost-effective way, which is essential to industrial mass production. The fabricated DCFET's exhibited a maximum current density I (formula available in paper)of 13.9 GHz at 300 K, all better than those of the counterpart DCFET's of traditional strip gates for contrast experiment. These results suggest that V-groove gate DCFET's are cost-effective devices with submicron gate FETs' performance, and are suitable for low-noise, high-speed, high-power applications.

Paper Details

Date Published: 13 December 1999
PDF: 8 pages
Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); doi: 10.1117/12.373014
Show Author Affiliations
Nien Show Ho, National Taiwan Univ. (Taiwan)
Sheyshi Lu, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 3861:
Gigahertz Devices and Systems
Dwight C. Streit, Editor(s)

© SPIE. Terms of Use
Back to Top