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Proceedings Paper

DC and rf characteristics of submicron gate FETs formed by micromachined V-groove technology
Author(s): Nien Show Ho; Sheyshi Lu
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Paper Abstract

The first In(formula available in paper). As micromachined V-groove gate doped-channel FET's (DCFET's) grown by GSMBE were proposed and fabricated successfully. The V-groove gate was formed by anisotropic wet etching of the undoped GaAs layer grown on top of device active layers, followed by standard metal evaporation and lift-off process. Owing to the outward slope of the sidewalls of micromachined V-groove, submicron effective gate length can be easily obtained by normal 1-micrometers UV optical contact lithography. In this way, we simultaneously achieved short gate length (for high speed) and small gate resistance (for low noise) via this `mushroom-like' V-groove gate, without resorting to the expensive and time-consuming e-beam lithography and the delicate multi-layer photoresist technique. Thanks to the inherent process simplicity, fabricated V-groove gates showed great uniformity and yield in a cost-effective way, which is essential to industrial mass production. The fabricated DCFET's exhibited a maximum current density I (formula available in paper)of 13.9 GHz at 300 K, all better than those of the counterpart DCFET's of traditional strip gates for contrast experiment. These results suggest that V-groove gate DCFET's are cost-effective devices with submicron gate FETs' performance, and are suitable for low-noise, high-speed, high-power applications.

Paper Details

Date Published: 13 December 1999
PDF: 8 pages
Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); doi: 10.1117/12.373014
Show Author Affiliations
Nien Show Ho, National Taiwan Univ. (Taiwan)
Sheyshi Lu, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 3861:
Gigahertz Devices and Systems
Dwight C. Streit, Editor(s)

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