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Proceedings Paper

Author(s): Kiuchul C. Hwang; Peter Chao; Paul Hoff
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Paper Abstract

Excellent noise and gain have been demonstrated at W-band with metamorphic HEMTs MMICs. The performance of the low noise amplifier (LNA) MHEMTs is very close to that of InP HEMTs on InP substrate. The material structure of the MHEMT has been developed using an AlGaAsSb lattice strain relief buffer layer on a GaAs substrate. DC characteristics of the 0.1 X 36 micrometers devices have shown typical extrinsic transconductance (gm) of 1200 mS/mm to 1300 mS/mm depending on Indium mole fraction in the channel. Small- signal S-parameter measurements performed on the 0.1 X 36 micrometers devices exhibited an excellent fT of 225 GHz and Maximum Stable Gain of 12.9 dB at 60 GHz and 10.4 dB at 110 GHz. The 3-stage W-band LNA MMIC exhibits 4.2 dB noise figure with 18 dB gain at 82 GHz and 4.8 dB noise figure with 14 dB gain at 89 GHz.

Paper Details

Date Published: 13 December 1999
PDF: 8 pages
Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); doi: 10.1117/12.373010
Show Author Affiliations
Kiuchul C. Hwang, Sanders, A Lockheed Martin Co. (United States)
Peter Chao, Sanders, A Lockheed Martin Co. (United States)
Paul Hoff, Sanders, A Lockheed Martin Co. (United States)

Published in SPIE Proceedings Vol. 3861:
Gigahertz Devices and Systems
Dwight C. Streit, Editor(s)

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