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Proceedings Paper

Novel x-cut lithium niobate intensity modulator with 10-G bandwidth
Author(s): Yasuyuki Miyama; Tohru Sugamata; Yoshihiro Hashimoto; Toshihiro Sakamoto; Hirotoshi Nagata
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Paper Abstract

To fabricate a low-driving voltage, high-speed x-cut lithium niobate modulator with 50-ohm electrode impedance, we introduce a novel design approach, which employs a patterned SiO2 buffer layer. Experimental results showed that the partial removal of SiO2 buffer layer was effective in both lowering driving voltage and suppressing dc-drift of the modulators.

Paper Details

Date Published: 26 November 1999
PDF: 8 pages
Proc. SPIE 3847, Optical Devices for Fiber Communication, (26 November 1999); doi: 10.1117/12.371243
Show Author Affiliations
Yasuyuki Miyama, Sumitomo Osaka Cement Co., Ltd. (Japan)
Tohru Sugamata, Sumitomo Osaka Cement Co., Ltd. (Japan)
Yoshihiro Hashimoto, Sumitomo Osaka Cement Co., Ltd. (Japan)
Toshihiro Sakamoto, Sumitomo Osaka Cement Co., Ltd. (Japan)
Hirotoshi Nagata, Sumitomo Osaka Cement Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 3847:
Optical Devices for Fiber Communication
Michel J. F. Digonnet, Editor(s)

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