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Proceedings Paper

Comparison and analysis on measurement of optical parameters of some semiconductor films by two methods
Author(s): Jing Li; Fuxi Gan
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Paper Abstract

The optical parameters of GeTe and Ge2Sb2Te5 semiconductor films by thermal treatment have been measured carefully by using a new method. A compared study by means of using a spectrum ellipsometer is presented. The optical parameters of the sample films are precisely obtained through the processes of data simulation and correction of the old calculation model. In the meantime, the data calculations of the same samples measured by a spectrum ellipsometer are given, and the complex refractive index curves of them in the spectrum range from 250 nm to 830 nm are obtained.

Paper Details

Date Published: 30 November 1999
PDF: 8 pages
Proc. SPIE 3806, Recent Advances in Metrology, Characterization, and Standards for Optical Digital Data Disks, (30 November 1999); doi: 10.1117/12.371158
Show Author Affiliations
Jing Li, Shanghai Institute of Optics and Fine Mechanics (China)
Fuxi Gan, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 3806:
Recent Advances in Metrology, Characterization, and Standards for Optical Digital Data Disks
Fernando Luis Podio, Editor(s)

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