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Proceedings Paper

Thermal modeling using enthalpy methods to aid in the study of microstructural changes of multilayered phase change optical memories
Author(s): Swati Nagpal; Aradhna Aurora
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Paper Abstract

In DOW type of phase change optical memories the focus has been mainly on gestate based systems due to their good overwriting capability and very high order cyclability. To avoid the material deterioration problems such as material flow, high melting point, high viscosity or high-density components such as CrTe, (which have the same refractive index) can be added to the active layer. This has led to an improved performance of overwrite cycles from 105 to 106. Material flow occurs due to void formation. Voids and sinks are formed due to porosity of the active layer because the active layer has a density lower than that of the bulk material. One of the reasons for the formation and coalescence of voids is the way in which the film is deposited viz. Sputtering which makes Ar atoms accumulate in the films during deposition. Also the mechanical strength of the protective layer effects the repeatability of the active layer. All the above mentioned processes occur during melting and re- solidification of the nano-sized spots which are laser irradiated. Since the structure of the protective layers is very important in controlling the void formation, it is very important to study the thermal modeling of the full layer structure.

Paper Details

Date Published: 30 November 1999
PDF: 15 pages
Proc. SPIE 3806, Recent Advances in Metrology, Characterization, and Standards for Optical Digital Data Disks, (30 November 1999); doi: 10.1117/12.371157
Show Author Affiliations
Swati Nagpal, Univ. of New Delhi (United States)
Aradhna Aurora, Univ. of New Delhi (India)


Published in SPIE Proceedings Vol. 3806:
Recent Advances in Metrology, Characterization, and Standards for Optical Digital Data Disks
Fernando Luis Podio, Editor(s)

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