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Proceedings Paper

Progress in the development of three-aspherical mirror optics for EUVL
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Paper Abstract

A three-aspherical mirror system for extreme ultraviolet lithography (EUVL) has been developed. The mirrors were fabricated using a computer-controlled optical surfacing (CCOS) process and a phase-shift interferometer. The figure error of the mirrors is 0.58 nm. To achieve a high reflectivity in the clear aperture, Mo/Si multilayer films with an optimized d-spacing were successfully deposited on the mirrors. These results show that we have nearly achieved the target specifications for EUVL mirrors.

Paper Details

Date Published: 23 November 1999
PDF: 8 pages
Proc. SPIE 3767, EUV, X-Ray, and Neutron Optics and Sources, (23 November 1999); doi: 10.1117/12.371114
Show Author Affiliations
Hiroo Kinoshita, Himeji Institute of Technology (Japan)
Takeo Watanabe, Himeji Institute of Technology (Japan)
Daniel J. Bajuk, Silicon Valley Group, Inc. (United States)
Jay P. Daniel, Silicon Valley Group, Inc. (United States)
Yachiyo Kimpara, Avance, Inc. (Japan)
Michael D. Kriese, Osmic, Inc. (United States)
Yuriy Ya. Platonov, Osmic, Inc. (United States)


Published in SPIE Proceedings Vol. 3767:
EUV, X-Ray, and Neutron Optics and Sources
Carolyn A. MacDonald; Kenneth A. Goldberg; Juan R. Maldonado; Huaiyu Heather Chen-Mayer; Stephen P. Vernon, Editor(s)

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