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Proceedings Paper

Development of 256x256 GaN ultraviolet imaging arrays
Author(s): Ted Z. C. Huang; David Brent Mott; Anh T. La
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Paper Abstract

We have successfully developed a prototype 256 X 256 photoconductive GaN ultraviolet (UV) imaging array. The array, with its pixels (30 X 30 micrometer2) indium bump bonded to a Lockheed Martin Fairchild Systems LT9601 readout integrated circuit, is highly sensitive to ultraviolet light below 365 nm with a sharp reduction in response to visible and infrared light. The array was installed into a custom designed UV camera utilizing a Nikon UV lens with all the off-chip electronics interfaced to an automatic computer controlled system. To the best of our knowledge, this is the first reported UV array camera based on the nitride materials.

Paper Details

Date Published: 25 November 1999
PDF: 7 pages
Proc. SPIE 3764, Ultraviolet and X-Ray Detection, Spectroscopy, and Polarimetry III, (25 November 1999); doi: 10.1117/12.371089
Show Author Affiliations
Ted Z. C. Huang, NASA Goddard Space Flight Ctr. (United States)
David Brent Mott, NASA Goddard Space Flight Ctr. (United States)
Anh T. La, NASA Goddard Space Flight Ctr. (United States)


Published in SPIE Proceedings Vol. 3764:
Ultraviolet and X-Ray Detection, Spectroscopy, and Polarimetry III
Silvano Fineschi; Bruce E. Woodgate; Randy A. Kimble, Editor(s)

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