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Proceedings Paper

Characterization of silicon photodiode detectors with multilayer filter coatings for 17 to 150 A
Author(s): John F. Seely; Raj S. Korde; Frederick A. Hanser; J. Wise; Glenn E. Holland; James L. Weaver; Jack C. Rife
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Paper Abstract

Silicon photodiode detectors with multilayer coatings were characterized using synchrotron radiation. The coatings were composed of thin layers of metals and other materials and were designed to provide wavelength bandpasses in the 17 - 150 angstrom wavelength region. The measured transmittances of the multilayer coatings are in good agreement with the calculated transmittances. The modeling accounts for the transmittance of the multilayer coating and the deposition of the radiation energy in the underlying silicon photodiode. Detectors with the following layer materials (and wavelength bandpasses were characterized: Fe/Al (17 - 30 angstrom), Mn/Al (19 - 30 Angstrom), V/Al (24 - 35 angstrom), Ti/C (27 - 40 angstrom), Pd/Ti (27 - 50 angstrom), Ti/Zr/Al (27 - 50 angstrom), Ag/CaF2/Al (36 - 50 angstrom), and Ti/Mo/C (50 - 150 angstrom).

Paper Details

Date Published: 25 November 1999
PDF: 7 pages
Proc. SPIE 3764, Ultraviolet and X-Ray Detection, Spectroscopy, and Polarimetry III, (25 November 1999); doi: 10.1117/12.371077
Show Author Affiliations
John F. Seely, Naval Research Lab. (United States)
Raj S. Korde, International Radiation Detectors Inc. (United States)
Frederick A. Hanser, Panametrics, Inc. (United States)
J. Wise, Panametrics, Inc. (United States)
Glenn E. Holland, SFA Inc. (United States)
James L. Weaver, Naval Research Lab. (United States)
Jack C. Rife, Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 3764:
Ultraviolet and X-Ray Detection, Spectroscopy, and Polarimetry III
Silvano Fineschi; Bruce E. Woodgate; Randy A. Kimble, Editor(s)

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