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Proceedings Paper

Structural changes in silicon implanted by phosphorus
Author(s): Igor M. Fodchuk; M. D. Raransky; O. G. Gimchinsky; V. M. Godovaniouk; L. L. Gultaj; Z. Swiatek; J. N. Bonarsky
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Paper Abstract

Research of structural changes in subsurface layers of Si single crystals during formatting amorphous layers hidden under the surface are carried out. It established, that phosphorus ion (with 180 keV energy and doze of the order 1015 ion/cm2) implantation and subsequent short-term temperature annealing at T equals 500 degree(s)C are caused great structural changes in subsurface areas. The great strains in direction perpendicular to interface are characteristic of structures formed in this way.

Paper Details

Date Published: 18 November 1999
PDF: 5 pages
Proc. SPIE 3904, Fourth International Conference on Correlation Optics, (18 November 1999); doi: 10.1117/12.370438
Show Author Affiliations
Igor M. Fodchuk, Chernivtsi State Univ. (Ukraine)
M. D. Raransky, Chernivtsi State Univ. (Ukraine)
O. G. Gimchinsky, Chernivtsi State Univ. (Ukraine)
V. M. Godovaniouk, Chernivtsi State Univ. (Ukraine)
L. L. Gultaj, Chernivtsi State Univ. (Ukraine)
Z. Swiatek, Institute of Metallurgy and Material Science (Poland)
J. N. Bonarsky, Institute of Metallurgy and Material Science (Poland)


Published in SPIE Proceedings Vol. 3904:
Fourth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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