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Proceedings Paper

Optoelectronic properties of new amorphous silicon photoreceptor
Author(s): Jung Chuan Chou; Hsu Ying Yang
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Paper Abstract

A new highly sensitive photoreceptor in visible-spectrum region with high contrast voltage ratio has been developed for an electrophotographic device. The multilayered amorphous silicon photoreceptor has been prepared with PE- LPCVD and sputtering system. The structure of the photoreceptor consists of four part: (a) Al substrate, (b) a-WO3 blocking layer, (c) a-Si:H(i) photogeneration and transport layer, (d) a-C:H surface protecting layer. In this study, the photoreceptor is exposed with different wavelength and illumination. Keithley 236 Semiconductor Parameter Analyzer is used to measure the current-voltage curves of photoreceptor. In addition, Electrostatic Parameter Analyzer is used to measure the photo-induced discharge curves, which is used to simulate the processes of copying machines. According to the I-V curves and PID curves, we can investigate the transport of photocarrier in photoreceptor and the optoelectronic parameters.

Paper Details

Date Published: 12 November 1999
PDF: 11 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370375
Show Author Affiliations
Jung Chuan Chou, National Yunlin Univ. of Science and Technology (Taiwan)
Hsu Ying Yang, National Yunlin Univ. of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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