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Proceedings Paper

Radiative transitions in porous silicon
Author(s): Huy Bui; Hoa Binh Phi; TranCao Dao; Van Hoi Pham; Duc Thinh Vu
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Paper Abstract

Radiative transitions in porous silicon (PS) have been studied using a new variant of the time-resolved photoluminescence (TRPL) spectroscopic measurement, in which beside the pulsed light source the sample was irradiated additionally by a continuous light source. With this modification a certain photoluminescence (PL) region in the TRPL spectrum of PS may be quelched, the position and width of which depends strictly on the wavelength range and intensity and the continuous light source. Using different continuous light sources, the quenching of different PL regions has been observed experimentally. The results obtained are discussed with the model of recombination in the core and on the surface of nanocrystallites. It seems that the selective quenching of PL in the TRPL spectrum is helpful to reveal the origin of the light emission for PS.

Paper Details

Date Published: 12 November 1999
PDF: 5 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370374
Show Author Affiliations
Huy Bui, National Ctr. for Science and Technology of Vietnam (Vietnam)
Hoa Binh Phi, National Ctr. for Science and Technology of Vietnam (Vietnam)
TranCao Dao, National Ctr. for Science and Technology of Vietnam (Vietnam)
Van Hoi Pham, National Ctr. for Science and Technology of Vietnam (Vietnam)
Duc Thinh Vu, National Ctr. for Science and Technology of Vietnam (Vietnam)


Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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