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Proceedings Paper

Optical damage in Zn:Ga:LiNbO3 waveguide substrates
Author(s): Yequan Zhao; Wusheng Xu; Hongxi Zhang; Yuheng Xu; Jiyang Wang
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Paper Abstract

Doping ZnO and Ga2O3 in LiNbO3 crystal, the Zn:Ga:LiNbO3 was grown by Czochralski method. The IR transmission spectra and the photon damage resistance ability of the LiNbO3 and Zn:Ga:LiNbO3 crystal were measured. The proton exchange technology was used to make the LiNbO3 and Zn:Ga:LiNbO3 crystal waveguide substrates. The m-line method was taken to study the photo damage of waveguide substrate. We observed that the threshold of Zn:Ga:LiNbO3 is above two magnitude higher than that of Mg:LiNbO3. Zn:Ga:LiNbO3 crystal is better performance than LiNbO3 crystal.

Paper Details

Date Published: 12 November 1999
PDF: 6 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370369
Show Author Affiliations
Yequan Zhao, Harbin Institute of Technology (China)
Wusheng Xu, Harbin Institute of Technology (China)
Hongxi Zhang, Harbin Institute of Technology (China)
Yuheng Xu, Harbin Institute of Technology (China)
Jiyang Wang, Shandong Univ. (China)


Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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