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Proceedings Paper

Dual-wavelength response in double-barrier quantumwell infrared photodetectors
Author(s): T. Osotchan; Dao Hua Zhang; W. Shi
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Paper Abstract

Quantum well IR photodetector (QWIP) which exhibits the dual wavelength response in region of 3-5 and 8-12 μm was demonstrated in one stack of double barrier quantum well (DBQW) structures. These dual-band photoresponse originate from intersubband absorption between bound-to-quasi-bound and bound-to-continuum states, respectively. The symmetric DBQW consists of two subsequence barriers on both sides of the well i.e. inner thin high barrier and outer thick low barrier. The inner barrier was designed to be thin enough to allow photocarriers in quasi-bound-state tunnel through and also to make the continuum-state occurs at the top of the outer barrier. Due to photoresponse from the transitions between bound-to-quasi-bound and bound-to-continuous states, the desired wavelength regions were tailored by the barrier height of both inner and outer carriers while the sensitivities of each band were designed by thickness of the inner barrier. The optimum structure was proposed by 14-band Hamiltonian including six p-like conduction band states. The absorption in TE and TM mode were separately derived and illustrated in each response wavelength for the optimum structure.

Paper Details

Date Published: 12 November 1999
PDF: 10 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370360
Show Author Affiliations
T. Osotchan, Nanyang Technological Univ. (Singapore)
Dao Hua Zhang, Nanyang Technological Univ. (Singapore)
W. Shi, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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