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Proceedings Paper

Fabrication of infrared LEDs/LDs at wavelength of 1.5 um using LPE-grown wafer
Author(s): Dwi Bayuwati; Masbah Rotuanta Tagore Siregar; Tomi Budi Waluyo
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Paper Abstract

We describe our research on the fabrication of GaInAsP/InP Light Emitting Diodes (LEDs)/Laser Diodes (LDs) at wavelength of 1.5 micrometers using wafer grown by Liquid Phase Epitaxy (LPE) system. The source materials are baked at temperature of 610 degrees C at the horizontal LPE system. The epitaxially layers are formed on InP substrate in the graphite boat with the cooling rate of 0.7 degrees C/min. The wafers are characterized using Scanning Electron Microscope (SEM), Photoluminescence (PL) and x-ray Diffraction (XRD) techniques. It is formed into LED chips by cleaving method after metalization, annealing and lapping processes. About 20-30 LED chips can be obtained from a wafer. Characterization has been conducted to examine the LED basics characteristics which showing the diode characteristics of the chips at its voltage-current curve. Furthermore, electroluminescence process is conducted by giving an instantaneous current pulse on the chip and detecting the output light using Ge detector; resulting a voltage-time curve displayed at a digital storage oscilloscope. The spectrum of the LED chip was observed by using an optical spectrum analyzer, giving peak wavelength at (lambda) approximately 1.5 micrometers with spectral width between 90-105 nm. Future works in fabrication of GaInAsP/InP LD at this wavelength is still underway starting with preliminary experiment of photolithography and etching techniques of LPE grown wafers is conducted.

Paper Details

Date Published: 12 November 1999
PDF: 8 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370355
Show Author Affiliations
Dwi Bayuwati, Indonesia Institute of Sciences (Indonesia)
Masbah Rotuanta Tagore Siregar, Indonesia Institute of Sciences (Indonesia)
Tomi Budi Waluyo, Indonesia Institute of Sciences (Indonesia)


Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices

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