Share Email Print

Proceedings Paper

Comparison of optical properties in GaN and InGaN quantum well structures
Author(s): Shigefusa F. Chichibu; Amane Shikanai; Takahiro Deguchi; Akiko Setoguchi; Rikuro Nakai; Kazumi Wada; Steven P. DenBaars; Takayuki Sota; Takashi Mukai; Shuji Nakamura
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Static, field-mounted and time-resolved spectroscopic measurements were carried out to compare the electronic structures between AlGaN/GaN binary and GaN/InGaN ternary single quantum wells (SQWs). The internal field exits across the quantum well (QW) naturally induces quantum-confined Stark effects, namely the redshift of the QW resonance energy and separation of electron-hole wavefunction overlap. Thus AlGaN/GaN SQWs exhibited a weak luminescence peak due to the presence of nonradiative channels. However, optical absorption and degenerate pump-probe measurements revealed that excitonic character still remains for the thin QWs having the well width nearly the same as the bulk free exciton Bohr radius even under high electric field as high as 0.73 MV/cm. A slightly In-alloyed InGaN SQW exhibited bright luminescence peak in spite of the pronounced effective bandgap inhomogeneity in the QW, which was confirmed by the point excitation and monochromatic cathodoluminescence mapping methods to have the lateral potential interval smaller than 40 nm. Therefore the light emitting area of the potential minima has the size defined as 'quantum-disk'. Carriers generated in the InGaN QWEs are effectively localized in these regions to form localized QW excitons exhibiting highly efficient spontaneous emissions.

Paper Details

Date Published: 12 November 1999
PDF: 9 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370352
Show Author Affiliations
Shigefusa F. Chichibu, Univ. of Tsukuba (Japan)
Amane Shikanai, Waseda Univ. (Japan)
Takahiro Deguchi, Waseda Univ. (Japan)
Akiko Setoguchi, Univ. of Tsukuba (Japan)
Rikuro Nakai, Univ. of Tsukuba (Japan)
Kazumi Wada, Massachusetts Institute of Technology (United States)
Steven P. DenBaars, Univ. of California/Santa Barbara (United States)
Takayuki Sota, Waseda Univ. (Japan)
Takashi Mukai, Nichia Chemical Industries, Ltd. (Japan)
Shuji Nakamura, Nichia Chemical Industries, Ltd. (United States)

Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

© SPIE. Terms of Use
Back to Top