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Proceedings Paper

Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN
Author(s): Marek Osinski; Petr Georgievich Eliseev; Jinhyun Lee; Vladimir A. Smagley; Tamoya Sugahara; Shiro Sakai
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Paper Abstract

Experimental data on photoluminescence of various bulk and quantum-well epitaxial InGaN/GaN structures grown by MOCVD are interpreted in terms of a band-tail model of inhomogeneously broadened radiative recombination. The anomalous temperature-induced blue spectral is shown to result from band-tail recombination under non-degenerate conditions. Significant differences are observed between epilayers grown on sapphire substrates and on GaN substrates prepared by the sublimination method, with no apparent evidence of band tails in homoepitaxial structures, indicating their higher crystalline quality.

Paper Details

Date Published: 12 November 1999
PDF: 12 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370346
Show Author Affiliations
Marek Osinski, Ctr. for High Technology Materials/Univ. of New Mexico (United States)
Petr Georgievich Eliseev, Ctr. for High Technology Materials/Univ. of New Mexico (USA) and P.N. Lebedev Physical Ine (United States)
Jinhyun Lee, Ctr. for High Technology Materials/Univ. of New Mexico (United States)
Vladimir A. Smagley, Ctr. for High Technology Materials/Univ. of New Mexico (United States)
Tamoya Sugahara, Univ. of Tokushima (Japan)
Shiro Sakai, Univ. of Tokushima (Japan)


Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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