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Proceedings Paper

3C(beta)-SiC-on-insulator waveguide structures for modulators and sensor systems
Author(s): Adrian P. Vonsovici; Graham T. Reed; Mike R. Josey; Paul R. Routley; Alan G. R. Evans; Fereydoon Namavar
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Paper Abstract

In this work planar and rib (beta) -SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, a buried SiO2 layer was formed by a two-step high-energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI. The losses have been measured at 1.3 and 1.55micrometers . Rib waveguides were fabricated using dry-etching. These types of waveguides have great potential for high-speed silicon-based photonic devices compatible with silicon technology.

Paper Details

Date Published: 12 November 1999
PDF: 8 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370332
Show Author Affiliations
Adrian P. Vonsovici, Univ. of Surrey (United Kingdom)
Graham T. Reed, Univ. of Surrey (United Kingdom)
Mike R. Josey, Univ. of Southampton (United Kingdom)
Paul R. Routley, Univ. of Southampton (United Kingdom)
Alan G. R. Evans, Univ. of Southampton (United Kingdom)
Fereydoon Namavar, Spire Corp. (United States)

Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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