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Proceedings Paper

Effect of etch pit density of InP substrate on the stability of InGaAs/InGaAsP quantum well laser materials
Author(s): Hwi Siong Lim; Teik Kooi Ong; Boon Siew Ooi; Yee Loy Lam; Yuen Chuen Chan; Yan Zhou
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Paper Abstract

InGaAs/InGaAsP quantum well structures have wide applications, such as the integration of optoelectronic devices and low threshold current density laser, as well as low loss waveguides and optical switching elements. In many case, high temperature operations are necessary during the course of processing a wafer. Here, we report the influence of low and high etch pit densities (EPD) InP substrates on the thermal stability of InGaAs/InGaAsP quantum well laser structure. Both the n-type of S-doped (EPD<500 cm-2)and Sn-doped (EPD≈5x104cm-2) InP substrates were grown under the same run with half wafer each. To assess the thermal stability, the samples were annealed, using a rapid thermal processor, between 650 °C and 750 °C, for 60 seconds. 77 K photoluminescence measurements were performed on the samples after annealing to study the degree of bandgap shift. It was found that S-doped InP substrate with low EPD, i.e. low point defect density, is thermally stable up to an annealing temperature of 625 °C for 60 seconds. Compared to the S-doped materials, laser structure grown on the Sn-doped InP substrate was found to exhibit larger degree of bandgap shift resulted from defects induced quantum well intermixing.

Paper Details

Date Published: 12 November 1999
PDF: 6 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370308
Show Author Affiliations
Hwi Siong Lim, Nanyang Technological Univ. (Singapore)
Teik Kooi Ong, Nanyang Technological Univ. (Singapore)
Boon Siew Ooi, Nanyang Technological Univ. (Singapore)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)
Yan Zhou, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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