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Proceedings Paper

Dry plasma etching of GaAs vias using BCl3/Ar and Cl2/Ar plasmas
Author(s): Yuwen Chen; Boon Siew Ooi; Geok Ing Ng; Chee Leong Tan; Yuen Chuen Chan
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Paper Abstract

We report the development and characterizations of GaAs via hole processes using BCl3/Ar and Cl2/Ar plasmas generated by an electron cyclotron resonance (ECR) system. The effect of the in- and out-diffuse of the reactive species and etch by-products, of the BCl3/Ar plasma, on the etch rate of the GaAs vias has been studied. The average GaAs etch rate was found to increase with increasing of both BCl3 and Cl2 flow rates. Under similar conditions, namely 800W microwave power, 150W RF power, 10sccm Ar flow rate, same flow rate, the etch rates of Cl2/Ar plasma were found to be 7-16 times higher than those of BCl3/Ar plasma. As the microwave power increased from 0 to 1500W, the etch rate increased by a factor of as large as 124 for the Cl2/Ar process. Etch rate as high as 6.7micrometers /min was observed from sample etched in Cl2/Ar plasma using a microwave power, RF power and process pressure of 800W, 150W and 50mTorr, respectively. Compared to the BCl3/Ar plasma, Cl2/Ar plasma is a better candidate, as this process gives higher etch rate and smoother etched surface.

Paper Details

Date Published: 12 November 1999
PDF: 8 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370307
Show Author Affiliations
Yuwen Chen, Nanyang Technological Univ. (Singapore)
Boon Siew Ooi, Nanyang Technological Univ. (Singapore)
Geok Ing Ng, Nanyang Technological Univ. (Singapore)
Chee Leong Tan, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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