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Proceedings Paper

Quantum well intermixing of GaAs/AlGaAs laser structure using one-step rapid thermal oxidation of AlAs
Author(s): Seng Lee Ng; Oki Gunawan; Boon Siew Ooi; Yee Loy Lam; Yan Zhou; Yuen Chuen Chan
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Paper Abstract

We report the development of a new quantum well intermixing technique in GaAs/AlGaAs laser structure. This technique uses a grown-in AlAs sacrificing layer as intermixing source and with the same layer, but oxidized using a one-step rapid thermal process (RTP), as the intermixing mask. Selective intermixing can therefore be achieved across the wafer using a one-step RTP cycle. Differential bandgap shift of as large as 47 meV has been observed from the masked and oxidized regions.

Paper Details

Date Published: 12 November 1999
PDF: 7 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370305
Show Author Affiliations
Seng Lee Ng, Nanyang Technological Univ. (Singapore)
Oki Gunawan, Nanyang Technological Univ. (Singapore)
Boon Siew Ooi, Nanyang Technological Univ. (Singapore)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)
Yan Zhou, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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