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Proceedings Paper

Intracavity piezoelectric InGaAs/GaAs laser modulator
Author(s): John P. R. David; E. A. Khoo; Arbinder S. Pabla; Jon Woodhead; R. Grey; Graham J. Rees
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Paper Abstract

Integration of a laser and modulator is shown to be possible in the InGaAs/AlGaAs material system by growing on a B GaAs substrate and utilizing the piezoelectric effect. The absorption characteristics of the modulator section are initially red shifted due to the built-in piezoelectric field and can be easily blue shifted with applied reverse bias. Since even under lasing conditions there is found to be a significant residual piezoelectric field in the quantum well, the modulator can be biased to a shorter wavelength than the lasing emission. Utilizing these effects a simple two-section laser-modulator device in which the absorber section lies within the laser cavity has been fabricated. The result show that the threshold current of the laser- modulator structure is controlled by the reverse bias voltage and hence absorption in the modulator section.

Paper Details

Date Published: 12 November 1999
PDF: 8 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370303
Show Author Affiliations
John P. R. David, Univ. of Sheffield (United Kingdom)
E. A. Khoo, Univ. of Sheffield (United Kingdom)
Arbinder S. Pabla, Univ. of Sheffield (United Kingdom)
Jon Woodhead, Univ. of Sheffield (United Kingdom)
R. Grey, Univ. of Sheffield (United Kingdom)
Graham J. Rees, Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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